Volume pricing
- 1+ pcs$0.72
- 10+ pcs$0.68
- 100+ pcs$0.64
- 500+ pcs$0.60
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 320mV @ 300mA, 3A
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 1.1W
- Fabrika Tedarik Süresi
- 4 Weeks
- Parça Durumu
- Active
- Number Of Elements
- 1
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 30V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 1.1W
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1A 2V
- Temel Parça No
- PBSS4032N
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage Vebo
- 5V
- Hfemin
- 100
- Max Breakdown Voltage
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Pin Sayısı
- 3
- Max Collector Current
- 2.6A
- Transistor Type
- NPN
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Current Collector Cutoff Max
- 100nA
- Transition Frequency
- 180MHz
- Collector Emitter Voltage Vceo
- 30V
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 180MHz
- Terminal Pozisyonu
- DUAL
- Collector Base Voltage Vcbo
- 30V
- Reach Svhc
- No SVHC
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 3
- Ambalaj
- Cut Tape (CT)
- Yayın Yılı
- 2009
- Transistor Application
- SWITCHING
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