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PBSS303PX,115

Nexperia USA Inc.

PBSS303PX,115

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.88
  • 10+ pcs$0.83
  • 100+ pcs$0.78
  • 500+ pcs$0.74

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RoHS

Compliant

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Specifications

Vce Saturation Max Ib Ic
230mV @ 255mA, 5.1A
Transistor Element Material
SILICON
Radyasyon Dayanımı
No
Max Power Dissipation
2.1W
Fabrika Tedarik Süresi
4 Weeks
Parça Durumu
Active
Number Of Elements
1
Polaritychannel Type
PNP
Collectoremitter Breakdown Voltage
30V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Jesd30 Code
R-PSSO-F3
Case Connection
COLLECTOR
Terminal Formu
FLAT
Dc Current Gain Hfe Min Ic Vce
200 @ 2A 2V
Temel Parça No
PBSS303P
Power Max
2.1W
Kılıf / Paket
TO-243AA
Turn Off Timemax Toff
320ns
Emitter Base Voltage Vebo
5V
Max Breakdown Voltage
30V
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Pin Sayısı
3
Max Collector Current
5.1A
Transistor Type
PNP
Terminal Sayısı
3
Terminal Kaplaması
Tin (Sn)
Transition Frequency
130MHz
Current Collector Cutoff Max
100nA ICBO
Turn On Timemax Ton
70ns
Collector Emitter Voltage Vceo
30V
ECCN Kodu
EAR99
Kurşunsuz
Lead Free
Gain Bandwidth Product
130MHz
Collector Base Voltage Vcbo
30V
JESD-609 Kodu
e3
Pin Sayısı
4
Ambalaj
Tape & Reel (TR)
Çalışma Sıcaklığı
150°C TJ

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