Volume pricing
- 1+ pcs$0.78
- 10+ pcs$0.73
- 100+ pcs$0.69
- 500+ pcs$0.65
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Vce Saturation Max Ib Ic
- 220mV @ 255mA, 5.1A
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 2.1W
- Fabrika Tedarik Süresi
- 4 Weeks
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 2.1W
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 30V
- Case Connection
- COLLECTOR
- Jesd30 Code
- R-PSSO-F3
- Temel Parça No
- PBSS303N
- Terminal Formu
- FLAT
- Dc Current Gain Hfe Min Ic Vce
- 250 @ 2A 2V
- Kılıf / Paket
- TO-243AA
- Emitter Base Voltage Vebo
- 5V
- Turn Off Timemax Toff
- 375ns
- Max Breakdown Voltage
- 30V
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Max Collector Current
- 5.1A
- Pin Sayısı
- 3
- Transistor Type
- NPN
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Transition Frequency
- 130MHz
- Current Collector Cutoff Max
- 100nA ICBO
- Turn On Timemax Ton
- 65ns
- Collector Emitter Voltage Vceo
- 30V
- Collector Base Voltage Vcbo
- 30V
- JESD-609 Kodu
- e3
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 130MHz
- Yayın Yılı
- 2009
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 4
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