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PBSS302PD,115

Nexperia USA Inc.

PBSS302PD,115

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.62
  • 10+ pcs$0.59
  • 100+ pcs$0.55
  • 500+ pcs$0.52

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Compliant

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Specifications

Radyasyon Dayanımı
No
Max Power Dissipation
1.1W
Fabrika Tedarik Süresi
4 Weeks
Parça Durumu
Active
Number Of Elements
1
Tepe Reflow Sıcaklığı (°C)
260
Vce Saturation Max Ib Ic
450mV @ 600mA, 6A
Transistor Element Material
SILICON
Polaritychannel Type
PNP
Collectoremitter Breakdown Voltage
40V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Power Dissipation
2.5W
Power Max
1.1W
Kılıf / Paket
SC-74, SOT-457
Terminal Formu
GULL WING
Dc Current Gain Hfe Min Ic Vce
175 @ 2A 2V
Temel Parça No
PBSS302P
Hfemin
30
Max Breakdown Voltage
40V
Element Configuration
Single
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
30
Emitter Base Voltage Vebo
-5V
Transistor Type
PNP
Pin Sayısı
6
Max Collector Current
4A
Transition Frequency
110MHz
Current Collector Cutoff Max
100nA
Collector Emitter Voltage Vceo
40V
Terminal Sayısı
6
Terminal Kaplaması
Tin (Sn)
Kurşunsuz
Lead Free
ECCN Kodu
EAR99
Gain Bandwidth Product
110MHz
Terminal Pozisyonu
DUAL
Collector Base Voltage Vcbo
40V
JESD-609 Kodu
e3
Transistor Application
SWITCHING
Montaj
Surface Mount

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