Volume pricing
- 1+ pcs$0.27
- 10+ pcs$0.25
- 100+ pcs$0.24
- 500+ pcs$0.22
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 200
- Collectoremitter Breakdown Voltage
- 15V
- Pin Sayısı
- 3
- Collector Base Voltage Vcbo
- 15V
- Element Configuration
- Single
- Gain Bandwidth Product
- 420MHz
- Max Breakdown Voltage
- 15V
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 10mA 2V
- Max Power Dissipation
- 590mW
- Collector Emitter Voltage Vceo
- 15V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 8 Weeks
- Contact Plating
- Tin
- Yayın Yılı
- 2012
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- NPN
- Frekans
- 420MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Collectoremitter Saturation Voltage
- 1.1V
- Vce Saturation Max Ib Ic
- 25mV @ 500μA, 10mA
- JESD-609 Kodu
- e3
- Power Max
- 250mW
- Parça Durumu
- Active
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Max Collector Current
- 500mA
- Pin Sayısı
- 3
- Temel Parça No
- PBSS2515
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Emitter Base Voltage Vebo
- 6V
- Power Dissipation
- 590mW
- Kılıf / Paket
- 3-XFDFN
- Current Collector Cutoff Max
- 100nA ICBO
- Montaj
- Surface Mount
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