Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 650mW
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 50mA 10V
- Yayın Yılı
- 2014
- Fabrika Tedarik Süresi
- 4 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Ambalaj
- Cut Tape (CT)
- Montaj
- Surface Mount
- Transistor Type
- PNP
- Parça Durumu
- Active
- Contact Plating
- Tin
- Collector Base Voltage Vcbo
- 600V
- Çalışma Sıcaklığı
- 150°C TJ
- Collector Emitter Voltage Vceo
- 250mV
- Terminal Sayısı
- 4
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Power Max
- 650mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 600V
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 50mA
- Terminal Formu
- GULL WING
- Frequency Transition
- 38MHz
- Polaritychannel Type
- PNP
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Pin Sayısı
- 4
- Configuration
- SINGLE
- Montaj Tipi
- Surface Mount
- Emitter Base Voltage Vebo
- 6V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Kılıf / Paket
- TO-261-4, TO-261AA
- Max Breakdown Voltage
- 600V
- Terminal Pozisyonu
- DUAL
- Current Collector Cutoff Max
- 100nA
- Case Connection
- COLLECTOR
- Transition Frequency
- 38MHz
- Pin Sayısı
- 4
- Max Collector Current
- 500mA
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