Volume pricing
- 1+ pcs$0.23
- 10+ pcs$0.22
- 100+ pcs$0.20
- 500+ pcs$0.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 4 Weeks
- Hfemin
- 60
- Yayın Yılı
- 2009
- Transistor Application
- SWITCHING
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Reel (TR)
- Gain Bandwidth Product
- 35MHz
- Radyasyon Dayanımı
- No
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 1A 10V
- Max Power Dissipation
- 1.45W
- Frekans
- 35MHz
- Uzunluk
- 12.7mm
- Collectoremitter Breakdown Voltage
- 150V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 350mV @ 400mA, 2A
- Transistor Type
- PNP
- Montaj
- Surface Mount
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- 150°C TJ
- Collector Base Voltage Vcbo
- 200V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collector Emitter Voltage Vceo
- 150V
- Weight
- 4.535924g
- Terminal Sayısı
- 4
- Pin Sayısı
- 4
- Temel Parça No
- PBHV9215
- Emitter Base Voltage Vebo
- -6V
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- Tin (Sn)
- Yükseklik
- 6.35mm
- Polaritychannel Type
- PNP
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 100nA
- JESD-609 Kodu
- e3
- Transition Frequency
- 35MHz
- Case Connection
- COLLECTOR
- Max Collector Current
- 2A
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