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NXP3875YR

Nexperia USA Inc.

NXP3875YR

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.04
  • 500+ pcs$0.03
  • 1000+ pcs$0.03
  • 2000+ pcs$0.03

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Compliant

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Specifications

Terminal Pozisyonu
DUAL
Gain Bandwidth Product
80MHz
Transition Frequency
80MHz
Current Collector Cutoff Max
100nA ICBO
Çalışma Sıcaklığı
150°C TJ
Continuous Collector Current
200mA
Hfemin
200
RoHS Durumu
ROHS3 Compliant
Currentcollector Ic Max
150mA
Radyasyon Dayanımı
No
Fabrika Tedarik Süresi
4 Weeks
Collectoremitter Breakdown Voltage
50V
Ambalaj
Tape & Reel (TR)
Collectoremitter Saturation Voltage
250mV
Max Power Dissipation
200mW
Montaj Tipi
Surface Mount
Terminal Sayısı
3
Yayın Yılı
2012
Terminal Formu
GULL WING
Transistor Application
SWITCHING
Element Configuration
Single
Number Of Elements
1
Transistor Element Material
SILICON
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
Polaritychannel Type
NPN
Seri
Automotive, AEC-Q101
Max Collector Current
150mA
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Type
NPN
Emitter Base Voltage Vebo
5V
Pin Sayısı
3
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Montaj
Surface Mount
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Collector Base Voltage Vcbo
60V
Collector Emitter Voltage Vceo
50V
Pin Sayısı
3

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