NX7002BKR

Specifications

Vgsth Max Id

2.1V @ 250μA

Terminal Formu

GULL WING

Current Continuous Drain Id25

270mA Ta

Fabrika Tedarik Süresi

4 Weeks

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Direnç

2.2Ohm

Input Capacitance Ciss Max Vds

23.6pF @ 10V

Terminal Sayısı

3

Pin Sayısı

3

Parça Durumu

Active

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Power Dissipation Max

310mW Ta 1.67W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reference Standard

IEC-60134

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-G3

Jedec95 Code

TO-236AB

Ds Breakdown Voltagemin

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

2.8 Ω @ 200mA, 10V

Vgs Max

±20V

Fet Type

N-Channel

Drain To Source Voltage Vdss

60V

Additional Feature

LOGIC LEVEL COMPATIBLE

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

5V 10V

Continuous Drain Current Id

270mA

Yayın Yılı

2014

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

1nC @ 10V

Drain Currentmax Abs Id

0.27A

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3