NX3008NBKMB,315

Specifications

Max Dual Supply Voltage

30V

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

1.1V @ 250μA

Turn On Delay Time

15 ns

Pin Sayısı

3

Gate Charge Qg Max Vgs

0.68nC @ 4.5V

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

530mA Ta

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

1.4 Ω @ 350mA, 4.5V

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Kılıf / Paket

3-XFDFN

Transistor Element Material

SILICON

Yüzey Montaj

YES

Power Dissipation

715mW

Pin Sayısı

3

Gate To Source Voltage Vgs

8V

Power Dissipation Max

360mW Ta 2.7W Tc

Terminal Sayısı

3

Fet Type

N-Channel

Vgs Max

±8V

Continuous Drain Current Id

530mA

Rise Time

11ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Yayın Yılı

2012

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

19 ns

Element Configuration

Single

Turn Off Delay Time

69 ns

Terminal Pozisyonu

BOTTOM

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Case Connection

DRAIN

Fabrika Tedarik Süresi

8 Weeks

Input Capacitance Ciss Max Vds

50pF @ 15V

Number Of Elements

1

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)