NX138BKR

Specifications

Jesd30 Code

R-PDSO-G3

Drain Currentmax Abs Id

0.265A

Yayın Yılı

2016

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

3.8Ohm

Number Of Elements

1

Continuous Drain Current Id

265mA

Reference Standard

IEC-60134

Drive Voltage Max Rds On Min Rds On

2.5V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Rds On Max Id Vgs

3.5 Ω @ 200mA, 10V

Ds Breakdown Voltagemin

60V

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Voltage Vdss

60V

Vgsth Max Id

1.5V @ 250μA

Gate Charge Qg Max Vgs

0.49nC @ 4.5V

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Montaj

Surface Mount

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Fabrika Tedarik Süresi

4 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

20.2pF @ 30V

Fet Type

N-Channel

Jedec95 Code

TO-236AB

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Power Dissipation Max

310mW Ta

Current Continuous Drain Id25

265mA Ta

Terminal Formu

GULL WING

Transistor Element Material

SILICON