Volume pricing
- 1+ pcs$0.02
- 10+ pcs$0.02
- 100+ pcs$0.02
- 500+ pcs$0.02
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 60V
- Ambalaj
- Tape & Reel (TR)
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 2.5V 10V
- Rds On Max Id Vgs
- 4.5 Ω @ 190mA, 10V
- Number Of Elements
- 1
- Reference Standard
- IEC-60134
- Drain Currentmax Abs Id
- 0.19A
- Jesd30 Code
- R-PDSO-G3
- Operating Mode
- ENHANCEMENT MODE
- Terminal Pozisyonu
- DUAL
- Yayın Yılı
- 2016
- Current Continuous Drain Id25
- 190mA Ta
- Vgs Max
- ±20V
- Power Dissipation Max
- 325mW Ta
- Fet Type
- N-Channel
- Jedec95 Code
- TO-236AB
- Transistor Element Material
- SILICON
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Input Capacitance Ciss Max Vds
- 20pF @ 30V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 4 Weeks
- Parça Durumu
- Active
- Drain To Source Voltage Vdss
- 60V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 1.4nC @ 10V
- Vgsth Max Id
- 1.5V @ 250μA
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