Volume pricing
- 1+ pcs$1.47
- 10+ pcs$1.39
- 100+ pcs$1.31
- 500+ pcs$1.24
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Genişlik
- 6.35mm
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2008
- Continuous Drain Current Id
- 34A
- Drain To Source Breakdown Voltage
- 75V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 2070pF @ 25V
- Rds On Max Id Vgs
- 28m Ω @ 15A, 10V
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SC-100, SOT-669
- Weight
- 4.535924g
- Contact Plating
- Tin
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 12 Weeks
- Transistor Application
- SWITCHING
- Jedec95 Code
- MO-235
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 30
- Current Continuous Drain Id25
- 34A Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate To Source Voltage Vgs
- 15V
- Turn Off Delay Time
- 51 ns
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.03Ohm
- Pin Sayısı
- 4
- Rise Time
- 106ns
- Parça Durumu
- Active
- Vgsth Max Id
- 2V @ 1mA
- Power Dissipation
- 85W
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 16 ns
- Yükseklik
- 6.35mm
- Fall Time Typ
- 83 ns
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 4
- Seri
- Automotive, AEC-Q101, TrenchMOS™
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