Volume pricing
- 1+ pcs$1.27
- 10+ pcs$1.20
- 100+ pcs$1.13
- 500+ pcs$1.07
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 30nC @ 5V
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 4
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number Of Elements
- 1
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Contact Plating
- Tin
- Terminal Pozisyonu
- SINGLE
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SC-100, SOT-669
- Fall Time Typ
- 21 ns
- Input Capacitance Ciss Max Vds
- 3096pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 18m Ω @ 20A, 10V
- Continuous Drain Current Id
- 48.2A
- Turn On Delay Time
- 13 ns
- Terminal Formu
- THROUGH-HOLE
- Yüzey Montaj
- NO
- Yayın Yılı
- 2010
- Transistor Element Material
- SILICON
- Power Dissipation
- 106W
- Vgsth Max Id
- 2.15V @ 1mA
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Pin Sayısı
- 4
- Ambalaj
- Tape & Reel (TR)
- Rise Time
- 11ns
- Operating Mode
- ENHANCEMENT MODE
- Max Dual Supply Voltage
- 75V
- Power Dissipation Max
- 106W Tc
- Turn Off Delay Time
- 77 ns
- Gate To Source Voltage Vgs
- 15V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Current Continuous Drain Id25
- 48.2A Tc
- Vgs Max
- ±15V
- Jedec95 Code
- MO-235
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- JESD-609 Kodu
- e3
- Pin Sayısı
- 4
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