BUK9Y15-100E,115

Specifications

Input Capacitance Ciss Max Vds

6139pF @ 25V

Drain To Source Breakdown Voltage

100V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

14.7m Ω @ 20A, 10V

Continuous Drain Current Id

69A

Turn On Delay Time

21 ns

Terminal Formu

GULL WING

Yüzey Montaj

YES

Element Configuration

Single

Yayın Yılı

2014

Transistor Element Material

SILICON

Fet Type

N-Channel

Vgsth Max Id

2.1V @ 1mA

Parça Durumu

Active

Gate Charge Qg Max Vgs

45.8nC @ 5V

REACH Uyumluluk Kodu

not_compliant

Terminal Kaplaması

Tin (Sn)

Fabrika Tedarik Süresi

12 Weeks

Terminal Sayısı

4

Number Of Elements

1

Seri

Automotive, AEC-Q101, TrenchMOS™

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SC-100, SOT-669

Fall Time Typ

59 ns

Number Of Channels

1

Jedec95 Code

MO-235

Drive Voltage Max Rds On Min Rds On

5V 10V

JESD-609 Kodu

e3

Pin Sayısı

4

Transistor Application

SWITCHING

Case Connection

DRAIN

Pin Sayısı

4

Ambalaj

Tape & Reel (TR)

Additional Feature

AVALANCHE RATED

Rise Time

32ns

Operating Mode

ENHANCEMENT MODE

Max Dual Supply Voltage

100V

Turn Off Delay Time

85 ns

Power Dissipation Max

195W Tc

Gate To Source Voltage Vgs

15V