BUK9Y11-30B,115

Specifications

Gate To Source Voltage Vgs

15V

Current Continuous Drain Id25

59A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Pin Sayısı

4

Drainsource On Resistancemax

0.012Ohm

Rise Time

33ns

Turn Off Delay Time

62 ns

Transistor Application

SWITCHING

Jedec95 Code

MO-235

JESD-609 Kodu

e3

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SC-100, SOT-669

Weight

4.535924g

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Contact Plating

Tin

Genişlik

6.35mm

Transistor Element Material

SILICON

Yayın Yılı

2007

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1614pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

9m Ω @ 25A, 10V

Continuous Drain Current Id

59A

Avalanche Energy Rating Eas

112 mJ

Vgs Max

±15V

Montaj Tipi

Surface Mount

Additional Feature

LOGIC LEVEL COMPATIBLE

Uzunluk

6.35mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

239A

Power Dissipation Max

75W Tc

Max Dual Supply Voltage

30V

Pin Sayısı

4

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yükseklik

6.35mm

Fall Time Typ

42 ns