BUK9M24-40EX

Specifications

Transistor Element Material

SILICON

Yayın Yılı

2016

Parça Durumu

Active

Vgsth Max Id

2.1V @ 1mA

Fet Type

N-Channel

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

40V

Input Capacitance Ciss Max Vds

798pF @ 25V

Rds On Max Id Vgs

20m Ω @ 10A, 10V

Continuous Drain Current Id

30A

Drain To Source Voltage Vdss

40V

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SOT-1210, 8-LFPAK33

Gate Charge Qg Max Vgs

7.7nC @ 5V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

4

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Seri

Automotive, AEC-Q101, TrenchMOS™

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G4

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

5V

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

12.6 mJ

Current Continuous Drain Id25

30A Tc

Vgs Max

±10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.024Ohm

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

121A

Power Dissipation Max

44W Tc