BUK9M12-60EX

Specifications

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G4

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

5V

Current Continuous Drain Id25

54A Tc

Vgs Max

±10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

50.5 mJ

Power Dissipation Max

79W Tc

Pulsed Drain Currentmax Idm

216A

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.012Ohm

Pin Sayısı

8

Montaj

Surface Mount

Parça Durumu

Active

Vgsth Max Id

2.1V @ 1mA

Fet Type

N-Channel

Transistor Element Material

SILICON

Yayın Yılı

2016

Terminal Formu

GULL WING

Continuous Drain Current Id

54A

Drain To Source Voltage Vdss

60V

Rds On Max Id Vgs

11m Ω @ 15A, 10V

Input Capacitance Ciss Max Vds

2769pF @ 25V

Ds Breakdown Voltagemin

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

SOT-1210, 8-LFPAK33

RoHS Durumu

ROHS3 Compliant

Terminal Pozisyonu

SINGLE

Seri

Automotive, AEC-Q101, TrenchMOS™

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4

Fabrika Tedarik Süresi

26 Weeks