Volume pricing
- 1+ pcs$0.76
- 10+ pcs$0.72
- 100+ pcs$0.68
- 500+ pcs$0.64
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 13.4nC @ 5V
- Fabrika Tedarik Süresi
- 26 Weeks
- Terminal Sayısı
- 4
- Terminal Pozisyonu
- SINGLE
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Number Of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SOT-1210, 8-LFPAK33
- Input Capacitance Ciss Max Vds
- 1721pF @ 25V
- Ds Breakdown Voltagemin
- 40V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 9m Ω @ 15A, 10V
- Drain To Source Voltage Vdss
- 40V
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2016
- Parça Durumu
- Active
- Vgsth Max Id
- 2.1V @ 1mA
- Fet Type
- N-Channel
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.011Ohm
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 211A
- Power Dissipation Max
- 62W Tc
- Reference Standard
- AEC-Q101; IEC-60134
- Avalanche Energy Rating Eas
- 32.4 mJ
- Current Continuous Drain Id25
- 53A Tc
- Vgs Max
- ±10V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Drain Currentmax Abs Id
- 53A
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PSSO-G4
- Case Connection
- DRAIN
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