Volume pricing
- 1+ pcs$1.61
- 10+ pcs$1.52
- 100+ pcs$1.43
- 500+ pcs$1.35
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Qualification Status
- Not Qualified
- Jesd30 Code
- R-PSSO-G2
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Case Connection
- DRAIN
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 47ns
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- Turn Off Delay Time
- 28 ns
- Power Dissipation Max
- 62W Tc
- Max Dual Supply Voltage
- 55V
- Gate To Source Voltage Vgs
- 10V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Avalanche Energy Rating Eas
- 72 mJ
- Vgs Max
- ±10V
- Current Continuous Drain Id25
- 20A Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 68m Ω @ 10A, 10V
- Input Capacitance Ciss Max Vds
- 643pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 55V
- Yüzey Montaj
- YES
- Turn On Delay Time
- 10 ns
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 20A
- Transistor Element Material
- SILICON
- Power Dissipation
- 62W
- Yayın Yılı
- 2010
- Element Configuration
- Single
- Parça Durumu
- Active
- Vgsth Max Id
- 2V @ 1mA
- Fet Type
- N-Channel
- Fabrika Tedarik Süresi
- 12 Weeks
- Number Of Elements
- 1
- Seri
- Automotive, AEC-Q101, TrenchMOS™
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