Volume pricing
- 1+ pcs$0.86
- 10+ pcs$0.81
- 100+ pcs$0.76
- 500+ pcs$0.72
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2014
- Power Dissipation
- 182W
- Transistor Element Material
- SILICON
- Element Configuration
- Single
- Vgsth Max Id
- 2.1V @ 1mA
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 3.5m Ω @ 25A, 10V
- Input Capacitance Ciss Max Vds
- 6650pF @ 25V
- Drain To Source Breakdown Voltage
- 40V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 34 ns
- Terminal Formu
- GULL WING
- Yüzey Montaj
- YES
- Continuous Drain Current Id
- 75A
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Durumu
- ROHS3 Compliant
- Number Of Channels
- 1
- Fall Time Typ
- 60 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 52.1nC @ 5V
- REACH Uyumluluk Kodu
- not_compliant
- Number Of Elements
- 1
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Contact Plating
- Tin
- Terminal Sayısı
- 2
- Jesd30 Code
- R-PSSO-G2
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 5V
- JESD-609 Kodu
- e3
- Gate To Source Voltage Vgs
- 10V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Current Continuous Drain Id25
- 75A Tc
- Vgs Max
- ±10V
- Rise Time
- 64ns
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
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