Volume pricing
- 1+ pcs$5.41
- 10+ pcs$5.11
- 100+ pcs$4.82
- 500+ pcs$4.55
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 5V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Jesd30 Code
- R-PSSO-G2
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- AVALANCHE RATED
- Drainsource On Resistancemax
- 0.0025Ohm
- Pin Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 119ns
- Turn Off Delay Time
- 224 ns
- Pulsed Drain Currentmax Idm
- 1019A
- Power Dissipation Max
- 357W Tc
- Max Dual Supply Voltage
- 60V
- Avalanche Energy Rating Eas
- 655 mJ
- Gate To Source Voltage Vgs
- 2.1V
- Vgs Max
- ±10V
- Current Continuous Drain Id25
- 120A Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Input Capacitance Ciss Max Vds
- 17450pF @ 25V
- Drain To Source Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 2.5m Ω @ 25A, 5V
- Continuous Drain Current Id
- 120A
- Yüzey Montaj
- YES
- Turn On Delay Time
- 71 ns
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Power Dissipation
- 357W
- Yayın Yılı
- 2014
- Parça Durumu
- Active
- Vgsth Max Id
- 2.1V @ 1mA
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 120nC @ 5V
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 2
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