Volume pricing
- 1+ pcs$3.93
- 10+ pcs$3.71
- 100+ pcs$3.50
- 500+ pcs$3.30
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Fall Time Typ
- 116 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 95nC @ 5V
- Number Of Elements
- 1
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Contact Plating
- Tin
- Terminal Sayısı
- 2
- Yayın Yılı
- 2011
- Transistor Element Material
- SILICON
- Power Dissipation
- 300W
- Element Configuration
- Single
- Vgsth Max Id
- 2V @ 1mA
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 5.5m Ω @ 25A, 10V
- Input Capacitance Ciss Max Vds
- 11693pF @ 25V
- Drain To Source Breakdown Voltage
- 75V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 68 ns
- Terminal Formu
- GULL WING
- Yüzey Montaj
- YES
- Continuous Drain Current Id
- 75A
- Gate To Source Voltage Vgs
- 15V
- Avalanche Energy Rating Eas
- 852 mJ
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Vgs Max
- ±15V
- Current Continuous Drain Id25
- 75A Tc
- Rise Time
- 144ns
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.0066Ohm
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Max Dual Supply Voltage
- 75V
- Turn Off Delay Time
- 273 ns
- Power Dissipation Max
- 300W Tc
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