BUK9245-55A,118

Specifications

Transistor Element Material

SILICON

Yayın Yılı

2010

Family

FETs - Single

Fet Type

N-Channel

Montaj

Through Hole

Technology

MOSFET (Metal Oxide)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

55V

Input Capacitance Ciss Max Vds

1006pF @ 25V

Rds On Max Id Vgs

40m Ω @ 5A, 10V

Continuous Drain Current Id

175mA

Drain To Source Voltage Vdss

55V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Standard Package

1

Fabrika Tedarik Süresi

26 Weeks

Number Of Elements

1

Contact Plating

Tin

Drain Currentmax Abs Id

28A

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Jedec95 Code

TO-252AA

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

40

Pcn Packaging

DPAK Reel Leader Pockets 27/Sep/2013 Increase of Empty Pockets on Leader 08/Nov/2013

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

15V

Current Continuous Drain Id25

28A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.05Ohm

Pin Sayısı

3

Rise Time

132ns

Turn Off Delay Time

38 ns

Element Configuration

Single

Power Dissipation

70W

Parça Durumu

Active

Vgsth Max Id

2V @ 1mA

Paket

Bulk