BUK9209-40B,118

Specifications

Gate To Source Voltage Vgs

15V

HTS Kodu

8541.29.00.75

Çalışma Sıcaklığı

-55°C~185°C TJ

Current Continuous Drain Id25

75A Tc

Rise Time

106ns

Drainsource On Resistancemax

0.01Ohm

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

108 ns

Jesd30 Code

R-PSSO-G2

Drain Currentmax Abs Id

75A

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

26 Weeks

Number Of Elements

1

Contact Plating

Tin

Yayın Yılı

2010

Transistor Element Material

SILICON

Fet Type

N-Channel

Rds On Max Id Vgs

7m Ω @ 25A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

3619pF @ 25V

Drain To Source Breakdown Voltage

40V

Continuous Drain Current Id

99A

Avalanche Energy Rating Eas

240 mJ

Montaj Tipi

Surface Mount

Vgs Max

±15V

Operating Mode

ENHANCEMENT MODE

Max Dual Supply Voltage

40V

Power Dissipation Max

167W Tc

Radyasyon Dayanımı

No

Pin Sayısı

3

Case Connection

DRAIN

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

5V 10V

ECCN Kodu

EAR99

Fall Time Typ

89 ns

Gate Charge Qg Max Vgs

32nC @ 5V