Volume pricing
- 1+ pcs$0.68
- 10+ pcs$0.64
- 100+ pcs$0.60
- 500+ pcs$0.57
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Yayın Yılı
- 2013
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 80V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 498pF @ 25V
- Rds On Max Id Vgs
- 98m Ω @ 5A, 10V
- Continuous Drain Current Id
- 12.3A
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 3.9 ns
- Yüzey Montaj
- YES
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SC-100, SOT-669
- Fall Time Typ
- 3.7 ns
- Number Of Channels
- 1
- Gate Charge Qg Max Vgs
- 8.5nC @ 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 4
- Number Of Elements
- 1
- Seri
- TrenchMOS™
- Pin Sayısı
- 4
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Jedec95 Code
- MO-235
- Drive Voltage Max Rds On Min Rds On
- 10V
- Avalanche Energy Rating Eas
- 9.02 mJ
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Current Continuous Drain Id25
- 12.3A Tc
- Vgs Max
- ±20V
- Drainsource On Resistancemax
- 0.098Ohm
- Pin Sayısı
- 4
- Additional Feature
- AVALANCHE RATED
- Ambalaj
- Tape & Reel (TR)
- Rise Time
- 3.5ns
- Operating Mode
- ENHANCEMENT MODE
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