BUK7Y59-60EX

Specifications

Rds On Max Id Vgs

59m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

494pF @ 25V

Drain To Source Breakdown Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yüzey Montaj

YES

Turn On Delay Time

3.8 ns

Terminal Formu

GULL WING

Continuous Drain Current Id

17A

Transistor Element Material

SILICON

Yayın Yılı

2013

Element Configuration

Single

Parça Durumu

Active

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

7.8nC @ 10V

Number Of Elements

1

Seri

TrenchMOS™

Terminal Sayısı

4

Kılıf / Paket

SC-100, SOT-669

RoHS Durumu

ROHS3 Compliant

Number Of Channels

1

Fall Time Typ

5.2 ns

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

MO-235

Transistor Application

SWITCHING

Pin Sayısı

4

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Rise Time

5.5ns

Additional Feature

AVALANCHE RATED

Ambalaj

Tape & Reel (TR)

Pin Sayısı

4

Drainsource On Resistancemax

0.059Ohm

Turn Off Delay Time

6.5 ns

Pulsed Drain Currentmax Idm

67A

Power Dissipation Max

37W Tc

Max Dual Supply Voltage

60V

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

8.8 mJ