Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Yayın Yılı
- 2013
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 52A
- Rds On Max Id Vgs
- 12m Ω @ 15A, 10V
- Input Capacitance Ciss Max Vds
- 1039pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 40V
- Number Of Channels
- 1
- Kılıf / Paket
- SC-100, SOT-669
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 1
- Contact Plating
- Tin
- Fabrika Tedarik Süresi
- 12 Weeks
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- 30
- JESD-609 Kodu
- e3
- Jedec95 Code
- MO-235
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Current Continuous Drain Id25
- 52A Tc
- Gate To Source Voltage Vgs
- 20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Turn Off Delay Time
- 10 ns
- Rise Time
- 7ns
- Pin Sayısı
- 4
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 4V @ 1mA
- Parça Durumu
- Active
- Power Dissipation
- 65W
- Element Configuration
- Single
- Turn On Delay Time
- 6 ns
- Terminal Formu
- GULL WING
- Yüzey Montaj
- YES
- Fall Time Typ
- 6 ns
- Seri
- TrenchMOS™
- Terminal Sayısı
- 4
- REACH Uyumluluk Kodu
- not_compliant
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Case Connection
- DRAIN
- Kurşunsuz
- Lead Free
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