Volume pricing
- 1+ pcs$1.17
- 10+ pcs$1.11
- 100+ pcs$1.04
- 500+ pcs$0.98
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 12 Weeks
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number Of Elements
- 1
- Kılıf / Paket
- SC-100, SOT-669
- RoHS Durumu
- ROHS3 Compliant
- Number Of Channels
- 1
- Rds On Max Id Vgs
- 12m Ω @ 25A, 10V
- Drain To Source Breakdown Voltage
- 100V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 5067pF @ 25V
- Continuous Drain Current Id
- 85A
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Fet Type
- N-Channel
- Rise Time
- 18ns
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 4
- Turn Off Delay Time
- 66 ns
- Gate To Source Voltage Vgs
- 20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Continuous Drain Id25
- 85A Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 30
- Jedec95 Code
- MO-235
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- REACH Uyumluluk Kodu
- not_compliant
- Gate Charge Qg Max Vgs
- 68nC @ 10V
- Seri
- TrenchMOS™
- Terminal Pozisyonu
- SINGLE
- Terminal Sayısı
- 4
- Fall Time Typ
- 66 ns
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 12 ns
- Power Dissipation
- 238W
- Parça Durumu
- Active
- Vgsth Max Id
- 4V @ 1mA
- Operating Mode
- ENHANCEMENT MODE
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