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BUK768R1-100E,118

Nexperia USA Inc.

BUK768R1-100E,118

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$3.36
  • 10+ pcs$3.17
  • 100+ pcs$2.99
  • 500+ pcs$2.82

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RoHS

Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Fall Time Typ
49.6 ns
Gate Charge Qg Max Vgs
108nC @ 10V
Terminal Kaplaması
Tin (Sn)
REACH Uyumluluk Kodu
not_compliant
Fabrika Tedarik Süresi
12 Weeks
Terminal Sayısı
2
Configuration
SINGLE WITH BUILT-IN DIODE
Number Of Elements
1
Seri
Automotive, AEC-Q101, TrenchMOS™
Terminal Pozisyonu
SINGLE
Transistor Element Material
SILICON
Power Dissipation
263W
Yayın Yılı
2012
Parça Durumu
Active
Vgsth Max Id
4V @ 1mA
Fet Type
N-Channel
Input Capacitance Ciss Max Vds
7380pF @ 25V
Drain To Source Breakdown Voltage
100V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Rds On Max Id Vgs
8.1m Ω @ 25A, 10V
Continuous Drain Current Id
100A
Yüzey Montaj
YES
Turn On Delay Time
23.5 ns
Terminal Formu
GULL WING
Avalanche Energy Rating Eas
219 mJ
Gate To Source Voltage Vgs
20V
Vgs Max
±20V
Current Continuous Drain Id25
100A Tc
Çalışma Sıcaklığı
-55°C~175°C TJ
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Additional Feature
AVALANCHE RATED
Drainsource On Resistancemax
0.0081Ohm
Pin Sayısı
3
Operating Mode
ENHANCEMENT MODE
Rise Time
44.1ns
Power Dissipation Max
263W Tc
Turn Off Delay Time
72 ns

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