BUK7613-60E,118

Specifications

Element Configuration

Single

Yayın Yılı

2014

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Parça Durumu

Active

Input Capacitance Ciss Max Vds

1730pF @ 25V

Drain To Source Breakdown Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

13m Ω @ 15A, 10V

Continuous Drain Current Id

58A

Turn On Delay Time

10.8 ns

Terminal Formu

GULL WING

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time Typ

9.8 ns

Number Of Channels

1

REACH Uyumluluk Kodu

not_compliant

Gate Charge Qg Max Vgs

22.9nC @ 10V

Fabrika Tedarik Süresi

12 Weeks

Terminal Sayısı

2

Number Of Elements

1

Contact Plating

Tin

Seri

Automotive, AEC-Q101, TrenchMOS™

Pin Sayısı

3

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

58A Tc

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Additional Feature

AVALANCHE RATED

Rise Time

9.2ns