
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Svhc
- Yes
- Maximum Power Dissipation Mw
- 715
- Ambalaj
- Tape & Reel (TR)
- Typical Fall Time Ns
- 25
- Hts
- 8541.29.00.95
- Number Of Elements Per Chip
- 1
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Typical Rise Time Ns
- 11
- Ppap
- Unknown
- Fet Type
- P-Channel
- Maximum Drain Source Resistance Mohm
- 7500@10V
- Fabrika Tedarik Süresi
- 8 Weeks
- Maximum Gate Source Voltage V
- 20
- Mounting
- Surface Mount
- JESD-609 Kodu
- e3
- Yayın Yılı
- 2012
- Contact Plating
- Tin
- Element Configuration
- Single
- Vgsth Max Id
- 2.1V @ 250μA
- Number Of Elements
- 1
- Maximum Drain Source Voltage V
- 50
- Package Width
- 0.6
- Maximum Gate Source Leakage Current Na
- 10000
- Typical Gate Charge Vgs Nc
- 0.26@5V
- Channel Type
- P
- Input Capacitance Ciss Max Vds
- 36pF @ 25V
- Minimum Operating Temperature C
- -55
- Drive Voltage Max Rds On Min Rds On
- 10V
- Process Technology
- TMOS
- Current Continuous Drain Id25
- 230mA Ta
- Continuous Drain Current Id
- 230mA
- Pin Sayısı
- 3
- Supplier Package
- DFN-B
- Maximum Continuous Drain Current A
- 0.23
- Power Dissipation Max
- 360mW Ta 2.7W Tc
- Maximum Gate Threshold Voltage V
- 2.1
- Typical Input Capacitance Vds Pf
- 24@25V
- Power Dissipation
- 715mW
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 3-XFDFN
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