Volume pricing
- 1+ pcs$0.67
- 10+ pcs$0.63
- 100+ pcs$0.60
- 500+ pcs$0.56
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgs Max
- ±20V
- Current Continuous Drain Id25
- 375mA Ta
- Gate To Source Voltage Vgs
- 20V
- Max Dual Supply Voltage
- 250V
- Power Dissipation Max
- 1.5W Ta
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 5Ohm
- Pin Sayısı
- 4
- Ambalaj
- Tape & Reel (TR)
- Case Connection
- DRAIN
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 4
- Transistor Application
- SWITCHING
- Drain Currentmax Abs Id
- 0.375A
- Drive Voltage Max Rds On Min Rds On
- 10V
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-261-4, TO-261AA
- RoHS Durumu
- ROHS3 Compliant
- Terminal Pozisyonu
- DUAL
- Contact Plating
- Tin
- Number Of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Terminal Sayısı
- 4
- Fabrika Tedarik Süresi
- 4 Weeks
- Fet Type
- N-Channel
- Vgsth Max Id
- 2V @ 1mA
- Parça Durumu
- Active
- Yayın Yılı
- 2002
- Transistor Element Material
- SILICON
- Power Dissipation
- 1.5W
- Terminal Formu
- GULL WING
- Yüzey Montaj
- YES
- Continuous Drain Current Id
- 375mA
- Rds On Max Id Vgs
- 5 Ω @ 300mA, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 250V
- Input Capacitance Ciss Max Vds
- 120pF @ 25V
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