BSN20BKR

Specifications

Parça Durumu

Active

Rds On Max Id Vgs

2.8 Ω @ 200mA, 10V

Vgsth Max Id

1.4V @ 250μA

Turn On Delay Time

7.9 ns

Transistor Application

SWITCHING

Fall Time Typ

5.1 ns

Drain Currentmax Abs Id

0.265A

Transistor Element Material

SILICON

Terminal Sayısı

3

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Pin Sayısı

3

Contact Plating

Tin

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

60V

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Current Continuous Drain Id25

265mA Ta

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount

Rise Time

8.4ns

Power Dissipation Max

310mW Ta

Turn Off Delay Time

12.5 ns

Terminal Formu

GULL WING

Yayın Yılı

2014

Feedback Capmax Crss

7 pF

Ds Breakdown Voltagemin

60V

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Ambalaj

Cut Tape (CT)

Input Capacitance Ciss Max Vds

20.2pF @ 30V

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

265mA

Fabrika Tedarik Süresi

4 Weeks

Gate Charge Qg Max Vgs

0.49nC @ 4.5V