Volume pricing
- 1+ pcs$0.22
- 10+ pcs$0.21
- 100+ pcs$0.20
- 500+ pcs$0.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 360mW Ta 830mW Tc
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Seri
- TrenchMOS™
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin (Sn)
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 4.6nC @ 10V
- HTS Kodu
- 8541.29.00.75
- Pin Sayısı
- 3
- Input Capacitance Ciss Max Vds
- 138pF @ 25V
- Tepe Reflow Süresi (maks. sn)
- 30
- Yayın Yılı
- 1997
- Rds On Max Id Vgs
- 500m Ω @ 500mA, 10V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 850mA
- Yüzey Montaj
- YES
- Current Continuous Drain Id25
- 500mA Ta
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fabrika Tedarik Süresi
- 4 Weeks
- Terminal Pozisyonu
- DUAL
- Transistor Element Material
- SILICON
- Power Dissipation
- 830mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Drainsource On Resistancemax
- 0.5Ohm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Ds Breakdown Voltagemin
- 100V
- Drain Currentmax Abs Id
- 0.85A
- Pin Sayısı
- 3
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors