BSH111BKR

Specifications

Package Height

1(Max)

Maximum Operating Temperature C

150

Package Width

1.4(Max)

Rds On Max Id Vgs

4 Ω @ 200mA, 4.5V

Typical Turnon Delay Time Ns

8.3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

210mA Ta

Typical Fall Time Ns

4.8

Fabrika Tedarik Süresi

4 Weeks

Maximum Idss Ua

1

Typical Input Capacitance Vds Pf

19.1@30V

Turn On Delay Time

8.3 ns

Channel Mode

Enhancement

Maximum Gate Source Voltage V

10

Standard Package Name

SOT

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Eccn Us

EAR99

Pin Sayısı

3

Fall Time Typ

4.8 ns

Typical Rise Time Ns

8.4

Lead Shape

Gull-wing

Maximum Power Dissipation Mw

364

Pin Sayısı

3

Feedback Capmax Crss

7 pF

Maximum Drain Source Resistance Mohm

4000@4.5V

Channel Type

N

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Number Of Elements Per Chip

1

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Mounting

Surface Mount

Fet Type

N-Channel

Contact Plating

Tin

Maximum Gate Threshold Voltage V

1.3

Input Capacitance Ciss Max Vds

30pF @ 30V

Maximum Gate Source Leakage Current Na

5000

Yayın Yılı

2014