Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drainsource On Resistancemax
- 0.14Ohm
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Drain To Source Voltage Vdss
- 30V
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- DUAL
- Power Dissipation
- 830mW
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 2V @ 1mA
- Fet Type
- N-Channel
- Input Capacitance Ciss Max Vds
- 190pF @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 1.9A
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 120m Ω @ 1A, 10V
- Yayın Yılı
- 1997
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Yüzey Montaj
- YES
- Current Continuous Drain Id25
- 1.9A Tc
- Fabrika Tedarik Süresi
- 4 Weeks
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation Max
- 830mW Tc
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Seri
- TrenchMOS™
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 10nC @ 10V
- HTS Kodu
- 8541.29.00.75
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin (Sn)
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