Volume pricing
- 1+ pcs$0.11
- 10+ pcs$0.10
- 100+ pcs$0.10
- 500+ pcs$0.09
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 570mV @ 1mA
- Fet Type
- N-Channel
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 417mW
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Pin Sayısı
- 3
- Drain To Source Voltage Vdss
- 20V
- Ds Breakdown Voltagemin
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drainsource On Resistancemax
- 0.25Ohm
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- HTS Kodu
- 8541.21.00.95
- Gate Charge Qg Max Vgs
- 3.9nC @ 4.5V
- Terminal Formu
- GULL WING
- Montaj Tipi
- Surface Mount
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±8V
- Power Dissipation Max
- 417mW Ta
- Fabrika Tedarik Süresi
- 4 Weeks
- Drive Voltage Max Rds On Min Rds On
- 1.8V 4.5V
- Current Continuous Drain Id25
- 1.05A Ta
- Yüzey Montaj
- YES
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 1.05A
- Yayın Yılı
- 1998
- Rds On Max Id Vgs
- 200m Ω @ 600mA, 4.5V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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