Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 4 Weeks
- Collectoremitter Saturation Voltage
- 500mV
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Uzunluk
- 6.7mm
- Collector Base Voltage Vcbo
- 100V
- Transistor Element Material
- SILICON
- Yükseklik
- 1.7mm
- Weight
- 4.535924g
- Tepe Reflow Süresi (maks. sn)
- 30
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 4
- Terminal Sayısı
- 4
- Pin Sayısı
- 4
- Polaritychannel Type
- NPN
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Transistor Type
- NPN
- Power Dissipation
- 960mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Breakdown Voltage
- 80V
- Kılıf / Paket
- TO-261-4, TO-261AA
- Reach Svhc
- No SVHC
- Max Power Dissipation
- 960mW
- Collectoremitter Breakdown Voltage
- 80V
- Current Collector Cutoff Max
- 100nA ICBO
- Number Of Elements
- 1
- Transistor Application
- SWITCHING
- Genişlik
- 3.7mm
- JESD-609 Kodu
- e3
- Frekans
- 180MHz
- Terminal Pozisyonu
- DUAL
- Temel Parça No
- BCP56
- Case Connection
- COLLECTOR
- Dc Current Gain Hfe Min Ic Vce
- 63 @ 150mA 2V
- Kurşunsuz
- Lead Free
- Montaj
- Surface Mount
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 80V
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
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