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BC859C,235

Nexperia USA Inc.

BC859C,235

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.16
  • 10+ pcs$0.15
  • 100+ pcs$0.14
  • 500+ pcs$0.13

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RoHS

Compliant

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Specifications

Seri
Automotive, AEC-Q101
Collectoremitter Breakdown Voltage
30V
Max Collector Current
100mA
Element Configuration
Single
Pin Sayısı
3
Gain Bandwidth Product
100MHz
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
RoHS Durumu
ROHS3 Compliant
Pin Sayısı
3
Yayın Yılı
2009
Dc Current Gain Hfe Min Ic Vce
420 @ 2mA 5V
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Polaritychannel Type
PNP
Terminal Pozisyonu
DUAL
Max Power Dissipation
250mW
Collector Base Voltage Vcbo
30V
Current Collector Cutoff Max
15nA ICBO
Contact Plating
Tin
Vce Saturation Max Ib Ic
650mV @ 5mA, 100mA
Emitter Base Voltage Vebo
5V
Tepe Reflow Süresi (maks. sn)
30
Montaj
Surface Mount
Terminal Formu
GULL WING
Çalışma Sıcaklığı
150°C TJ
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
260
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
4 Weeks
ECCN Kodu
EAR99
JESD-609 Kodu
e3
Parça Durumu
Active
Collector Emitter Voltage Vceo
30V
Terminal Sayısı
3
Transition Frequency
100MHz
Transistor Application
AMPLIFIER
Power Dissipation
250mW
Number Of Elements
1
Frekans
100MHz
Temel Parça No
BC859

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