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BC858W,135

Nexperia USA Inc.

BC858W,135

Single BJT Transistors

In StockRoHS: Compliant
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  • 1+ pcs$0.02
  • 500+ pcs$0.01
  • 1000+ pcs$0.01
  • 2000+ pcs$0.01

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Compliant

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Specifications

Parça Durumu
Active
ECCN Kodu
EAR99
JESD-609 Kodu
e3
Fabrika Tedarik Süresi
4 Weeks
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Sıcaklığı (°C)
260
Transistor Element Material
SILICON
Çalışma Sıcaklığı
150°C TJ
Terminal Formu
GULL WING
Collectorbase Capacitancemax
5pF
Radyasyon Dayanımı
No
Montaj
Surface Mount
Tepe Reflow Süresi (maks. sn)
40
Transistor Type
PNP
Temel Parça No
BC858
Frekans
100MHz
Number Of Elements
1
Power Dissipation
200mW
Transistor Application
SWITCHING
Transition Frequency
100MHz
Terminal Sayısı
3
Collector Emitter Voltage Vceo
30V
Kılıf / Paket
SC-70, SOT-323
Gain Bandwidth Product
100MHz
Pin Sayısı
3
Element Configuration
Single
Max Collector Current
100mA
Collectoremitter Breakdown Voltage
30V
Seri
Automotive, AEC-Q101
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Emitter Base Voltage Vebo
5V
Contact Plating
Tin
Current Collector Cutoff Max
15nA ICBO
Collector Base Voltage Vcbo
30V
Max Power Dissipation
200mW
Terminal Pozisyonu
DUAL
Polaritychannel Type
PNP
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
125 @ 2mA 5V

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