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BC858W,115

Nexperia USA Inc.

BC858W,115

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.03
  • 10+ pcs$0.03
  • 100+ pcs$0.03
  • 500+ pcs$0.02

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RoHS

Compliant

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Specifications

Seri
Automotive, AEC-Q101
Collectoremitter Breakdown Voltage
30V
Element Configuration
Single
Max Collector Current
100mA
Kurşunsuz
Lead Free
Pin Sayısı
3
Kılıf / Paket
SC-70, SOT-323
Gain Bandwidth Product
100MHz
RoHS Durumu
ROHS3 Compliant
Pin Sayısı
3
Yayın Yılı
2009
Dc Current Gain Hfe Min Ic Vce
125 @ 2mA 5V
Montaj Tipi
Surface Mount
Polaritychannel Type
PNP
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
DUAL
Max Power Dissipation
200mW
Current Collector Cutoff Max
15nA ICBO
Collector Base Voltage Vcbo
30V
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Emitter Base Voltage Vebo
5V
Max Breakdown Voltage
30V
Contact Plating
Tin
Tepe Reflow Süresi (maks. sn)
40
Montaj
Surface Mount
Radyasyon Dayanımı
No
Collectorbase Capacitancemax
5pF
Çalışma Sıcaklığı
150°C TJ
Transistor Element Material
SILICON
Terminal Formu
GULL WING
Tepe Reflow Sıcaklığı (°C)
260
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
4 Weeks
ECCN Kodu
EAR99
JESD-609 Kodu
e3
Parça Durumu
Active
Collector Emitter Voltage Vceo
30V
Terminal Sayısı
3
Transistor Application
SWITCHING
Transition Frequency
100MHz

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