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Nexperia USA Inc.

BC857W-QF

Single BJT Transistors

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Specifications

Paket
Tape & Reel (TR)
Collectoremitter Saturation Voltage
650 mV
Çalışma Sıcaklığı
150°C (TJ)
Configuration
Single
Dc Collectorbase Gain Hfe Min
125 at - 2 mA, - 5 V
Power Max
200 mW
Transistor Type
PNP
Transistor Polarity
PNP
Montaj Stili
SMD/SMT
Voltage Collector Emitter Breakdown Max
45 V
Minimum Operating Temperature
- 65 C
Kılıf / Paket
SC-70, SOT-323
Ürün Durumu
Active
Currentcollector Ic Max
100 mA
Technology
Si
Frequency Transition
100MHz
Collector Emitter Voltage Vceo Max
45 V
Seri
Automotive, AEC-Q101
Tedarikçi Cihaz Paketi
SOT-323
Emitter Base Voltage Vebo
5 V
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Maks. Çalışma Sıcaklığı
+ 150 C
Pd Power Dissipation
200 mW
Collector Base Voltage Vcbo
50 V
Current Collector Cutoff Max
15nA (ICBO)
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
125 @ 2mA, 5V

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