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BC857W,135

Nexperia USA Inc.

BC857W,135

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.12
  • 10+ pcs$0.11
  • 100+ pcs$0.10
  • 500+ pcs$0.10

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RoHS

Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Pin Sayısı
3
Dc Current Gain Hfe Min Ic Vce
125 @ 2mA 5V
Yayın Yılı
2009
Montaj Tipi
Surface Mount
Polaritychannel Type
PNP
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
DUAL
Max Power Dissipation
200mW
Current Collector Cutoff Max
15nA ICBO
Collector Base Voltage Vcbo
50V
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Emitter Base Voltage Vebo
5V
Terminal Kaplaması
Tin (Sn)
Seri
Automotive, AEC-Q101
Collectoremitter Breakdown Voltage
45V
Element Configuration
Single
Max Collector Current
100mA
Pin Sayısı
3
Kılıf / Paket
SC-70, SOT-323
Gain Bandwidth Product
100MHz
Collector Emitter Voltage Vceo
45V
Terminal Sayısı
3
Transistor Application
SWITCHING
Transition Frequency
100MHz
Number Of Elements
1
Power Dissipation
200mW
Temel Parça No
BC857
Frekans
100MHz
Transistor Type
PNP
Tepe Reflow Süresi (maks. sn)
40
Collectorbase Capacitancemax
5pF
Radyasyon Dayanımı
No
Montaj
Surface Mount
Transistor Element Material
SILICON
Çalışma Sıcaklığı
150°C TJ
Terminal Formu
GULL WING
Tepe Reflow Sıcaklığı (°C)
260
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
4 Weeks

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