BC857BQC-QZ

Specifications

Package Type

DFN1412D-3

Technology

Si

Vce Saturation Max Ib Ic

650mV @ 5mA, 100mA

Collector Emitter Voltage Vceo Max

45 V

Power Max

360 mW

Montaj Stili

SMD/SMT

Current Collector Cutoff Max

15nA (ICBO)

Voltage Collector Emitter Breakdown Max

45 V

Pd Power Dissipation

450 mW

Collectoremitter Saturation Voltage

650 mV

Dc Current Gain Hfe Max

475 at - 2 mA, - 5 V

Emitter Base Voltage Vebo

6 V

Frequency Transition

100MHz

Ürün Durumu

Active

Collector Base Voltage Vcbo

50 V

Configuration

Single

Dc Collectorbase Gain Hfe Min

220 at - 2 mA, - 5 V

Power Dissipation

450mW

Montaj Tipi

Surface Mount, Wettable Flank

Dc Current Gain Hfe Min Ic Vce

220 @ 2mA, 5V

Transistor Polarity

PNP

Maximum Dc Collector Current

100 mA

Fabrika Paket Adedi

5000

Minimum Dc Current Gain

220

Minimum Operating Temperature

- 55 C

RoHS

Details

Currentcollector Ic Max

100 mA

Çalışma Sıcaklığı

150°C (TJ)

Qualification

AEC-Q101

Number Of Elements Per Chip

1

Seri

Automotive, AEC-Q101, BC857xQC-Q

Transistor Type

PNP

Maks. Çalışma Sıcaklığı

+ 150 C

Continuous Collector Current

100mA

Ambalaj

MouseReel

Tedarikçi Cihaz Paketi

DFN1412D-3

Maximum Collector Emitter Voltage

-45 V

Kılıf / Paket

3-XDFN Exposed Pad

Ürün Tipi

BJTs - Bipolar Transistors

Part Aliases

934664273147