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RoHS
Compliant
Support
Technical team support
Specifications
- Package Type
- DFN1412D-3
- Technology
- Si
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Collector Emitter Voltage Vceo Max
- 45 V
- Power Max
- 360 mW
- Montaj Stili
- SMD/SMT
- Current Collector Cutoff Max
- 15nA (ICBO)
- Voltage Collector Emitter Breakdown Max
- 45 V
- Pd Power Dissipation
- 450 mW
- Collectoremitter Saturation Voltage
- 650 mV
- Dc Current Gain Hfe Max
- 475 at - 2 mA, - 5 V
- Emitter Base Voltage Vebo
- 6 V
- Frequency Transition
- 100MHz
- Ürün Durumu
- Active
- Collector Base Voltage Vcbo
- 50 V
- Configuration
- Single
- Dc Collectorbase Gain Hfe Min
- 220 at - 2 mA, - 5 V
- Power Dissipation
- 450mW
- Montaj Tipi
- Surface Mount, Wettable Flank
- Dc Current Gain Hfe Min Ic Vce
- 220 @ 2mA, 5V
- Transistor Polarity
- PNP
- Maximum Dc Collector Current
- 100 mA
- Fabrika Paket Adedi
- 5000
- Minimum Dc Current Gain
- 220
- Minimum Operating Temperature
- - 55 C
- RoHS
- Details
- Currentcollector Ic Max
- 100 mA
- Çalışma Sıcaklığı
- 150°C (TJ)
- Qualification
- AEC-Q101
- Number Of Elements Per Chip
- 1
- Seri
- Automotive, AEC-Q101, BC857xQC-Q
- Transistor Type
- PNP
- Maks. Çalışma Sıcaklığı
- + 150 C
- Continuous Collector Current
- 100mA
- Ambalaj
- MouseReel
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Maximum Collector Emitter Voltage
- -45 V
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Ürün Tipi
- BJTs - Bipolar Transistors
- Part Aliases
- 934664273147
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