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BC856W,135

Nexperia USA Inc.

BC856W,135

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.10
  • 10+ pcs$0.10
  • 100+ pcs$0.09
  • 500+ pcs$0.09

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Specifications

Transistor Type
PNP
Seri
Automotive, AEC-Q101
Pin Sayısı
3
Number Of Elements
1
Ambalaj
Tape & Reel (TR)
Tepe Reflow Sıcaklığı (°C)
260
JESD-609 Kodu
e3
Parça Durumu
Active
Collector Emitter Voltage Vceo
65V
Çalışma Sıcaklığı
150°C TJ
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Tepe Reflow Süresi (maks. sn)
40
Dc Current Gain Hfe Min Ic Vce
125 @ 2mA 5V
RoHS Durumu
ROHS3 Compliant
Frekans
100MHz
Transition Frequency
100MHz
Polaritychannel Type
PNP
Element Configuration
Single
Kılıf / Paket
SC-70, SOT-323
Terminal Sayısı
3
Yayın Yılı
2009
Pin Sayısı
3
Transistor Element Material
SILICON
Radyasyon Dayanımı
No
Collectoremitter Saturation Voltage
-250mV
Terminal Formu
GULL WING
Terminal Pozisyonu
DUAL
Transistor Application
SWITCHING
Current Collector Cutoff Max
15nA ICBO
Gain Bandwidth Product
100MHz
Max Collector Current
100mA
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Fabrika Tedarik Süresi
4 Weeks
Temel Parça No
BC856
Power Dissipation
200mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Base Voltage Vcbo
80V
Contact Plating
Tin
Collectorbase Capacitancemax
5pF

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