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BC856W,115

Nexperia USA Inc.

BC856W,115

Single BJT Transistors

In StockRoHS: Compliant
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  • 1+ pcs$0.01
  • 500+ pcs$0.01
  • 1000+ pcs$0.01
  • 2000+ pcs$0.01

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Specifications

Voltage Collector Emitter Breakdown Max
65 V
Terminal Formu
GULL WING
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Fabrika Tedarik Süresi
4 Weeks
Max Collector Current
100mA
Ürün Durumu
Active
ECCN Kodu
EAR99
Max Power Dissipation
200mW
Contact Plating
Tin
Emitter Base Voltage Vebo
5V
Pin Sayısı
3
Seri
Automotive, AEC-Q101
Collector Emitter Voltage Vceo
65V
Çalışma Sıcaklığı
150°C TJ
Currentcollector Ic Max
100 mA
Dc Current Gain Hfe Min Ic Vce
125 @ 2mA 5V
Tepe Reflow Süresi (maks. sn)
40
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Polaritychannel Type
PNP
Transition Frequency
100MHz
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Terminal Sayısı
3
Pin Sayısı
3
Tedarikçi Cihaz Paketi
SOT-323
Radyasyon Dayanımı
No
Transistor Element Material
SILICON
Terminal Pozisyonu
DUAL
Current Collector Cutoff Max
15nA ICBO
Transistor Application
SWITCHING
Power Max
200 mW
Temel Parça No
BC856
Gain Bandwidth Product
100MHz
Power Dissipation
200mW
Collector Base Voltage Vcbo
80V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frequency Transition
100MHz
Collectoremitter Breakdown Voltage
65V
Collectorbase Capacitancemax
5pF

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