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BC850C,235

Nexperia USA Inc.

BC850C,235

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.06
  • 500+ pcs$0.04
  • 1000+ pcs$0.04
  • 2000+ pcs$0.03

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RoHS

Compliant

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Specifications

Terminal Formu
GULL WING
Terminal Pozisyonu
DUAL
Transistor Element Material
SILICON
Radyasyon Dayanımı
No
Gain Bandwidth Product
100MHz
Max Collector Current
100mA
Temel Parça No
BC850
Fabrika Tedarik Süresi
4 Weeks
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Transistor Application
SWITCHING
Current Collector Cutoff Max
15nA ICBO
Collector Base Voltage Vcbo
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation
250mW
Emitter Base Voltage Vebo
5V
Contact Plating
Tin
Max Power Dissipation
250mW
ECCN Kodu
EAR99
Collectoremitter Breakdown Voltage
45V
JESD-609 Kodu
e3
Parça Durumu
Active
Collector Emitter Voltage Vceo
45V
Seri
Automotive, AEC-Q101
Transistor Type
NPN
Pin Sayısı
3
Number Of Elements
1
Tepe Reflow Sıcaklığı (°C)
260
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Vcesatmax
0.6 V
Kurşunsuz
Lead Free
Dc Current Gain Hfe Min Ic Vce
420 @ 2mA 5V
Tepe Reflow Süresi (maks. sn)
40
Montaj
Surface Mount
Çalışma Sıcaklığı
150°C TJ
Element Configuration
Single
Max Breakdown Voltage
45V
RoHS Durumu
ROHS3 Compliant
Polaritychannel Type
NPN
Transition Frequency
100MHz

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