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BC850B,235

Nexperia USA Inc.

BC850B,235

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.19
  • 10+ pcs$0.18
  • 100+ pcs$0.17
  • 500+ pcs$0.16

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Base Voltage Vcbo
50V
Power Dissipation
250mW
Emitter Base Voltage Vebo
5V
ECCN Kodu
EAR99
Collectoremitter Breakdown Voltage
45V
Max Power Dissipation
250mW
Contact Plating
Tin
Terminal Pozisyonu
DUAL
Terminal Formu
GULL WING
Radyasyon Dayanımı
No
Transistor Element Material
SILICON
Temel Parça No
BC850
Fabrika Tedarik Süresi
4 Weeks
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Max Collector Current
100mA
Gain Bandwidth Product
100MHz
Current Collector Cutoff Max
15nA ICBO
Transistor Application
SWITCHING
Element Configuration
Single
Frekans
100MHz
Transition Frequency
100MHz
Polaritychannel Type
NPN
RoHS Durumu
ROHS3 Compliant
Pin Sayısı
3
Yayın Yılı
2009
Terminal Sayısı
3
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Collector Emitter Voltage Vceo
45V
JESD-609 Kodu
e3
Parça Durumu
Active
Ambalaj
Tape & Reel (TR)
Tepe Reflow Sıcaklığı (°C)
260
Number Of Elements
1
Pin Sayısı
3
Transistor Type
NPN
Seri
Automotive, AEC-Q101
Montaj
Surface Mount
Tepe Reflow Süresi (maks. sn)
40
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 5V

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