Volume pricing
- 1+ pcs$0.05
- 500+ pcs$0.04
- 1000+ pcs$0.03
- 2000+ pcs$0.03
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Gain Bandwidth Product
- 100MHz
- Power Dissipation
- 250mW
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- COLLECTOR
- Contact Plating
- Tin
- Fabrika Tedarik Süresi
- 8 Weeks
- Collector Emitter Voltage Vceo
- 45V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 100mA
- Montaj
- Surface Mount
- Collector Base Voltage Vcbo
- 50V
- Yayın Yılı
- 2011
- Polaritychannel Type
- NPN
- Frekans
- 100MHz
- Terminal Pozisyonu
- BOTTOM
- Current Collector Cutoff Max
- 15nA ICBO
- Emitter Base Voltage Vebo
- 6V
- Seri
- Automotive, AEC-Q101
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 5V
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Max Breakdown Voltage
- 45V
- Element Configuration
- Single
- Ambalaj
- Tape & Reel (TR)
- Çalışma Sıcaklığı
- 150°C TJ
- Hfemin
- 200
- Max Power Dissipation
- 250mW
- Kılıf / Paket
- 3-XFDFN
- Terminal Sayısı
- 3
- Collectoremitter Saturation Voltage
- 200mV
- Temel Parça No
- BC847
- Transistor Type
- NPN
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Surface Mount
- Max Collector Current
- 100mA
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